2SD2661
Transistors
Rev.A 1/2
Low frequency amplifier transistor(12V, 2A)
2SD2661


zFeatures
Low VCE(sat) ≤ 180mV
(IC / IB = 1A / 50mA)















zExternal dimensions (Unit : mm)
ROHM : MPT3
JEITA : SC-62
JEDEC: SOT-89
1.5
0.4
1.5 0.4
1.60.53.0
0.41.5
(3)
4.5
(1)
(2)
0.5
4.0
2.51.0
(1)Base
(2)Collector
(3)Emitter
Abbreviated symbol : FW

zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
15
12
6
2
2
500
150
−55 to +150
4
∗1
∗2
Unit
V
V
V
W
A(DC)
A(Pulse)
mW
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
∗1 PW=1ms Single Pulse
∗2 Mounted on a 40 40 0.7mm ceramic substrcte
+ +


zPackaging specifications
2SD2661
T100
1000
Type
Package
Code
Basic ordering unit (pieces)
Taping








zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
VCB=10V, IE=0A, f=1MHz
fT − 360 − MHz VCE=2V, IE=−200mA, f=100MHz
BVCBO 15 −−V IC=10µA
BVCEO 12 −−V IC=1mA
BVEBO 6 −−V IE=10µA
ICBO −−100 nA VCB=15V
IEBO −−100 nA VEB=6V
VCE(sat) − 90
680
mV IC / IB=1A / 50mA
hFE 270 −
180
− VCE=2V, IC=200mA
Cob − 20 − pF
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance