161
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1659)
Application : Audio, Series Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SD2589
110
110
5
6
1
50(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SD2589
100max
100max
110min
5000min*
2.5max
3.0max
60typ
55typ
Unit
m A
m A
V
V
V
MHz
pF
Conditions
VCB=110V
VEB=5V
IC=30mA
VCE=4V, IC=5A
IC=5A, IB=5mA
IC=5A, IB=5mA
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
Darlington 2SD2589
(Ta=25°C) (Ta=25°C) External Dimensions FM-25(TO220)
BE
2.5 2.5
C
16.0
±0.7
12.0min
4.0max
8.8
±0.2
1.35
0.65
+0.2
-0.1
10.2±0.2
ø3.75±0.2
3.0
±0.2
4.8±0.2
1.4
2.0±0.1
a
b
Weight : Approx 2.6g
a. Type No.
b. Lot No.
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
30
RL
(Ω)
6
IC
(A)
5
VBB2
(V)
–5
IB2
(mA)
–5
ton
(m s)
0.8typ
tstg
(m s)
6.2typ
tf
(m s)
1.1typ
IB1
(mA)
5
VBB1
(V)
10
* hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)
0
0
2
4
6
264
IB=0.1mA
5mA
1mA
0.5mA
0.4mA
0.3mA
0.2mA
0.02 0.1 0.5 1 65
(VCE=4V)
1000
500
200
5000
10000
40000
Typ
0
6
4
2
0 2.521
(VCE=4V)
0
3
2
1
0.1 10.5 105 10050
IC=5A
IC=3A
(VCE=4V)
0.02 0.1 5160.5
1000
500
100
5000
10000
40000
125˚C
25˚C
–0.02 –0.1 –1 –6
0
40
20
80
60
(VCE=12V)
Typ
0.4
1
5
0.5
1 10 100 1000 2000
50
40
30
20
10
2
0
0 25 50 75 100 125 150
IC–VCE Characteristics (Typical) VCE(sat)–IB Characteristics (Typical) IC
–VBE Temperature Characteristics (Typical)
Collector-Emitter Voltage VCE(V) Base Current IB(mA) Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
Collector Current I
C
(A)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) θ j-a–t Characteristics
Collector Current IC(A) Collector Current IC(A) Time t(ms)
DC Current Gain h
FE
DC Current Gain h
FE
Transient Thermal Resistance
θ
j-a
(˚C/W)
Safe Operating Area (Single Pulse)fT–IE Characteristics (Typical) Pc–Ta Derating
Cut-off Frequency f
T
(MH
Z
)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Emitter Current IE(A) Ambient Temperature Ta(˚C)
Without Heatsink
–30˚C