1
Transistor
2SD2575
Silicon NPN epitaxial planer type
For low-frequency power amplification
n
Features
l Low collector to emitter saturation voltage V
CE(sat)
.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0– 0.2 4.0– 0.2
5.1
–
0.2
13.5
–
0.5
0.45
+0.2
–0.10.45
+0.2
–0.1
1.27 1.27
2.3
–
0.2
2.54– 0.15
213
Symbol
V
CBO
V
CEO
V
EBO
I
CP
*1
I
C
P
C
T
j
T
stg
Ratings
15
10
10
9
5
750
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
V
EBO
h
FE1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 5V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10m A, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*
V
CE
= 2V, I
C
= 2A
*
I
C
= 3A, I
B
= 0.1A
*
V
CB
= 6V, I
E
= –50mA, f = 200MHz
V
CB
= 20V, I
E
= 0, f = 1MHz
min
10
10
700
195
typ
0.28
170
45
max
0.1
1.0
0.1
0.5
65
Unit
m A
m A
m A
V
V
V
MHz
pF
*1
Measuring time: t = 380m sec
*
Pulse measurement