157
Silicon NPN Triple Diffused Planar Transistor
Application : Series Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SD2558
200
200
6
5
2
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SD2558
100max
5max
200min
1500to6500
1.5max
15typ
110typ
Unit
m A
mA
V
V
MHz
pF
Conditions
VCB=200V
VEB=6V
IC=10mA
VCE=5V, IC=1A
IC=1A, IB=5mA
VCE=10V, IE=–0.5A
VCB=10V, f=1MHz
Darlington 2SD2558
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)
60
40
20
3.5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
Safe Operating Area (Single Pulse)fT–IE Characteristics (Typical)
0
5
4
2
1
3
0 2.521
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
1ms
10 505 100 300
0.05
0.1
1
0.5
10
30
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
(VCE=5V)
0.02 0.1 510.5
Collector Current IC(A)
DC Current Gain h
FE
1000
500
5
10
100
50
5000
8000
Pc–Ta Derating
125˚C
25˚C
–30˚C
Without Heatsink
Natural Cooling
0.3
0.5
5.0
1.0
1105 10050 20001000500
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
0
0
1
2
4
3
5
264
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
I
B
=1.0A
250mA
50mA
10mA
2.5mA
1.2mA
0.6mA
0.3mA
B
C
E
(70Ω)
Equivalent circuit
External Dimensions FM100(TO3PF)
4.41.5 1.5
BEC
5.45±0.1
ø3.3±0.2
1.6
3.3
1.75
0.8
±0.2
2.15
1.05
+0.2
-0.1
5.45±0.1
23.0
±0.3
16.2
9.5
±0.2 5.5
15.6±0.2
5.5±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3.0
0.8
a
b
Weight : Approx 6.5g
a. Type No.
b. Lot No.