Power Transistors
1
2SD2538
Silicon NPN triple diffusion planer type Darlington
For power amplification
a73 Features
• High forward current transfer ratio h
FE
• Full-pack package which can be installed to the heat sink with one
screw
a73 Absolute Maximum Ratings T
C
= 25°C
Unit: mm
Parameter Symbol Rating Unit
Collector to base voltage V
CBO
60 V
Collector to emitter voltage V
CEO
60 V
Emitter to base voltage V
EBO
5V
Peak collector current I
CP
4A
Collector current I
C
2 A
Collector power
T
C
= 25°CP
C
35 W
dissipation
T
a
= 25°C2
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
a73 Electrical Characteristics T
C
= 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
CBO
V
CB
= 60 V, I
E
= 01mA
I
CEO
V
CE
= 30 V, I
B
= 02
Emitter cutoff current I
EBO
V
EB
= 5 V, I
C
=
Collector to emitter voltage V
CEO
I
C
= 30 mA, I
B
= 060V
Forward current transfer ratio h
FE1
V
CE
= 4 V, I
C
= 1 A 1 000
h
FE2

*
V
CE
= 4 V, I
C
= 2 A 2 000 10 000
Collector to emitter saturation voltage V
CE(sat)
I
C
= 2 A, I
B
= 8 mA 2.5 V
Base to emitter voltage V
BE
V
CE
= 4 V, I
C
= 2 A 2.8 V
Transition frequency f
T
V
CE
= 10 V, I
C
= 0.5 A, f = 1 MHz 20 MHz
Turn-on time t
on
I
C
= 2 A, I
B1
= 8 mA, I
B2
= −8 mA 0.5 µs
Storage time t
stg
V
CC
= 50 V 4.0 µs
Fall time t
f
1.0 µs
1.4±0.2
1.6±0.2
0.8±0.1 0.55±0.15
2.54±0.30
5.08±0.50
123
2.6±0.1
2.9±0.2
4.6±0.2
φ 3.2±0.1
3.0
±
0.5
9.9±0.3
15.0
±
0.5
13.7
±
0.2
4.2
±
0.2
Solder Dip
1: Base
2: Collector
3: Emitter
TO-220D Full Pack Package
Internal Connection
B
C
E
Note)
*
: Rank classification
Rank P Q
h
FE2
4 000 to 10 000 2 000 to 5 000