Power Transistors
1
2SD2556
Silicon NPN epitaxial planer type
For power switching
a73 Features
• High forward current transfer ratio h
FE
• Allowing supply with the radial taping
• Low collector to emitter saturation voltage V
CE(sat)
: < 0.5 V
a73 Absolute Maximum Ratings T
C
= 25°C
Unit: mm
Parameter Symbol Rating Unit
Collector to base voltage V
CBO
130 V
Collector to emitter voltage V
CEO
80 V
Emitter to base voltage V
EBO
7V
Peak collector current I
CP
10 A
Collector current I
C
5 A
Collector power
T
C
= 25°CP
C
10 W
dissipation
T
a
= 25°C1
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
a73 Electrical Characteristics T
C
= 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
CBO
V
CB
= 100 V, I
E
= 010µA
Emitter cutoff current I
EBO
V
EB
= 5 V, I
C
= 05µA
Collector to emitter voltage V
CEO
I
C
= 1 mA, I
B
= 080V
Forward current transfer ratio h
FE1
V
CE
= 2 V, I
C
= 0.1 A 45
h
FE2

*
V
CE
= 2 V, I
C
= 2 A 90 260
Collector to emitter saturation voltage V
CE(sat)
I
C
= 4 A, I
B
= 0.2 A 0.5 V
Base to emitter saturation voltage V
BE(sat)
I
C
= 4 A, I
B
= 0.2 A 1.5 V
Transition frequency f
T
V
CE
= 10 V, I
C
= − 0.5 A, f = 10 MHz 30 MHz
Turn-on time t
on
I
C
= 2 A, I
B1
= 0.2 A, I
B2
= − 0.2 A 0.5 µs
Storage time t
stg
V
CC
= 50 V 1.5 µs
Fall time t
f
0.15 µs
6.5±0.1
2.3±0.1
(5.3)
(4.35)
(3.0)
(1.8)
(5.5)
0.75±0.1
2.3±0.1
4.6±0.1
123
0.5±0.1
1.0±0.1
0.1±0.05
0.5±0.1
0.8 max.
1.0
±
0.2
7.3
±
0.1
1.8
±
0.1
2.5
±
0.1
5.3±0.1
4.35±0.1
1: Base
2: Collector
3: Emitter U Type Package
Internal Connection
B
C
E
Note)
*
: Rank classification
Rank P Q
h
FE2
130 to 260 90 to 180