Power Transistors
1
2SD2530
Silicon NPN triple diffusion planer type Darlington
For power amplification
a73 Features
• High forward current transfer ratio h
FE
• Allowing supply with the radial taping
• Low collector to emitter saturation voltage V
CE(sat)
: < 2.5 V
a73 Absolute Maximum Ratings T
C
= 25°C
Unit: mm
Parameter Symbol Rating Unit
Collector to base voltage V
CBO
100 V
Collector to emitter voltage V
CEO
100 V
Emitter to base voltage V
EBO
5V
Peak collector current I
CP
10 A
Collector current I
C
5 A
Collector power
T
C
= 25°CP
C
15 W
dissipation
T
a
= 25°C2
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
a73 Electrical Characteristics T
C
= 25°C ± 2°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
CBO
V
CB
= 100 V, I
E
= 0 100 µA
I
CEO
V
CE
= 80 V, I
B
= 0 100 µA
Emitter cutoff current I
EBO
V
EB
= 5 V, I
C
= 05m
Collector to emitter voltage V
CEO
I
C
= 10 mA, I
B
= 0 100 V
Forward current transfer ratio h
FE1
V
CE
= 4 V, I
C
= 2 A 2 000 15 000
h
FE2
V
CE
= 4 V, I
C
= 4 A 500
Collector to emitter saturation voltage V
CE(sat)
I
C
= 2 A, I
B
= 2 mA 1.5 V
I
C
= 4 A, I
B
= 16 mA 2.5 V
Base to emitter saturation voltage V
BE(sat)
I
C
= 4 A, I
B
= 16 mA 2.5 V
Transition frequency f
T
V
CE
= 10 V, I
C
= 0.5 A, f = 1 MHz 20 MHz
Turn-on time t
on
I
C
= 4 A, I
B1
= 16 mA, I
B2
= −16 mA 0.27 µs
Storage time t
stg
V
CC
= 50 V 2.9 µs
Fall time t
f
1.0 µs
10.0±0.2
0.65±0.1
0.35±0.1
2.5±0.2
123
0.65±0.1
1.2±0.1
1.48±0.2
2.25±0.2
C 1.0
0.55±0.1
0.55±0.1
2.5±0.2
1.05±0.1
13.0
±0.2
4.2
±0.2
18.0
±0.5
Solder Dip
5.0±0.1
2.5
±0.1
90
°
1.0±0.2
1: Base
2: Collector
3: Emitter
MT-4 Package
Internal Connection
B
C
E