1
Power Transistors
2SD2486
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
n
Features
l High forward current transfer ratio h
FE
which has satisfactory
linearity
l Low collector to emitter saturation voltage V
CE(sat)
l Full-pack package which can be installed to the heat sink with
one screw
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
BP
P
C
T
j
T
stg
Ratings
60
60
7
8
4
2
25
2
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 60V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 2V, I
C
= 0.8A
V
CE
= 2V, I
C
= 2A
I
C
= 2A, I
B
= 50mA
I
C
= 2A, I
B
= 50mA
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
I
C
= 2A, I
B1
= 50mA, I
B2
= –50mA,
V
CC
= 50V
min
60
500
60
typ
1000
70
0.5
3.6
1.1
max
10
10
2000
0.5
1.5
Unit
m A
m A
V
V
V
MHz
m s
m s
m s
*
h
FE1
Rank classification
Rank Q R
h
FE1
500 to 1200 800 to 2000
T
C
=25 C
Ta=25 C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0– 0.2
5.5– 0.2
7.5
–
0.2
16.7
–
0.3
0.7
–
0.1
14.0
–
0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4– 0.1
1.3– 0.2
0.8– 0.1
2.54– 0.25
5.08– 0.5
213
2.7– 0.2
4.2– 0.2
4.2
–
0.2
f 3.1– 0.1