Power Transistors
1
2SD2420
Silicon NPN triple diffusion planer type Darlington
For power amplification
a73 Features
• High forward current transfer ratio h
FE
: 2 000 to 10 000
• Dielectric breakdown voltage of the package: > 5 kV
a73 Absolute Maximum Ratings T
C
= 25°C
Unit: mm
Parameter Symbol Rating Unit
Collector to base voltage V
CBO
60 V
Collector to emitter voltage V
CEO
60 V
Emitter to base voltage V
EBO
5V
Peak collector current I
CP
8A
Collector current I
C
4 A
Collector power
T
C
= 25°CP
C
40 W
dissipation
T
a
= 25°C 2.0
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
a73 Electrical Characteristics T
C
= 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
CBO
V
CB
= 60 V, I
E
= 0 200 µA
I
CEO
V
CE
= 30 V, I
B
= 0 500 µA
Emitter cutoff current I
EBO
V
EB
= 5 V, I
C
= 02m
Collector to emitter voltage V
CEO
I
C
= 30 mA, I
B
= 060V
Forward current transfer ratio h
FE1
V
CE
= 3 V, I
C
= 0.5 A 1 000
h
FE2

*
V
CE
= 3 V, I
C
= 3 A 2 000 10 000
Base to emitter voltage (DC value) V
BE
V
CE
= 3 V, I
C
= 3 A 2.5 V
Collector to emitter saturation voltage V
CE(sat)1
I
C
= 3 A, I
B
= 12 mA 2.0 V
V
CE(sat)2
I
C
= 5 A, I
B
= 20 mA 4.0 V
Transition frequency f
T
V
CE
= 10 V, I
C
= 0.5 A, f = 1 MHz 20 MHz
Turn-on time t
on
I
C
= 3 A, I
B1
= 12 mA, I
B2
= −12 mA 0.5 µs
Storage time t
stg
V
CC
= 50 V 4.0 µs
Fall time t
f
1.0 µs
1.4±0.2
1.6±0.2
0.8±0.1 0.55±0.15
2.54±0.30
5.08±0.50
123
2.6±0.1
2.9±0.2
4.6±0.2
φ 3.2±0.1
3.0
±
0.5
9.9±0.3
15.0
±
0.5
13.7
±
0.2
4.2
±
0.2
Solder Dip
1: Base
2: Collector
3: Emitter
TO-220D Package
Internal Connection
B
C
E
Note)
*
: Rank classification
Rank P Q
h
FE2
4 000 to 10 000 2 000 to 5 000