2SD2423
器件描述：Silicon NPN Epitaxial, Darlington
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：34.52KB，共6页
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2SD2423
Silicon NPN Epitaxial, Darlington
Application
Low frequency power amplifier
Features
The transistor with a built-in zener diode of surge absorb.
Outline
UPAK
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
4
1
2
3
2 kΩ
(Typ)
0.5 Ω
(Typ)
I
D
1
2, 4
3
Silicon NPN Epitaxial, Darlington
Application
Low frequency power amplifier
Features
The transistor with a built-in zener diode of surge absorb.
Outline
UPAK
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
4
1
2
3
2 kΩ
(Typ)
0.5 Ω
(Typ)
I
D
1
2, 4
3