2SD2414
器件描述：NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING, POWER AMPLIFIER APPLICATIONS)
器件厂商：TOSHIBA [Toshiba Semiconductor]
文件大小：171.3KB，共3页
Sponsor by e络盟器件资料摘要：
2SD2414(SM)
2003-02-04 1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2414(SM)
High Current Switching Applications
Power Amplifier Applications
Gb7G20 Low collector saturation voltage: V
CE (sat)
= 0.5 V (max) (at I
C
= 4 A)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
100 V
Collector-emitter voltage V
CEO
80 V
Emitter-base voltage V
EBO
5 V
Collector current I
C
7 A
Base current I
B
1 A
Ta = 25°C 1.5
Collector power
dissipation
Tc = 25°C
P
C
40
W
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-10S2
Weight: 1.4 g (typ.)
2003-02-04 1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2414(SM)
High Current Switching Applications
Power Amplifier Applications
Gb7G20 Low collector saturation voltage: V
CE (sat)
= 0.5 V (max) (at I
C
= 4 A)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
100 V
Collector-emitter voltage V
CEO
80 V
Emitter-base voltage V
EBO
5 V
Collector current I
C
7 A
Base current I
B
1 A
Ta = 25°C 1.5
Collector power
dissipation
Tc = 25°C
P
C
40
W
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-10S2
Weight: 1.4 g (typ.)