149
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1560)
Application : Audio, Series Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SD2390
160
150
5
10
1
100(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SD2390
100max
100max
150min
5000min*
2.5max
3.0max
55typ
95typ
Unit
m A
m A
V
V
V
MHz
pF
Conditions
VCB=160V
VEB=5V
IC=30mA
VCE=4V, IC=7A
IC=7A, IB=7mA
IC=7A, IB=7mA
VCE=12V, IE=–2A
VCB=10V, f=1MHz
Darlington 2SD2390
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)
Pc–Ta Derating
Safe Operating Area (Single Pulse)fT–IE Characteristics (Typical)
0
0
2
4
6
10
8
246
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
10mA
2.5mA
2mA 1.5mA
1.2mA
0.8mA
1mA
0.6mA
IB=0.4mA
02 0.5 1 5 10
Collector Current IC(A)
DC Current Gain h
FE
(VCE=4V)
1000
5000
10000
40000
Typ
0.1
1
3
0.5
1 10 100 10005 50 500 2000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
0
10
8
2
4
6
0 2 2.51
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=4V)
125˚C (Case Temp) 25˚C (Case Temp)
–30˚C (Case Temp)
100
50
3.5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
10ms
10 5053 100 200
0.05
0.1
1
0.5
10
30
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
DC
100ms
Without Heatsink
Natural Cooling
0
3
2
1
0.2 10.5 105 20010050
Base Current IB(mA)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
IC=5A
IC=7A
IC=10A
(VCE=4V)
0.2 0.5 5 101
Collector Current IC(A)
DC Current Gain h
FE
1000
500
5000
10000
50000
70000
125˚C
25˚C
–30˚C
–0.02 –0.1 –1 –10
0
20
40
100
80
60
Cut-off Frequency f
T
(MH
Z
)
(VCE=12V)
Emitter Current IE(A)
Typ
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
70
RL
(Ω)
10
IC
(A)
7
VBB2
(V)
–5
IB2
(mA)
–7
ton
(m s)
0.5typ
tstg
(m s)
10.0typ
tf
(m s)
1.1typ
IB1
(mA)
7
VBB1
(V)
10
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
19.9
±0.3
4.0
2.0
5.0
±0.2
1.8
ø3.2±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45±0.1 5.45±0.1
C
4.8±0.2
0.65
+0.2
-0.1
1.4
2.0±0.1
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B
C
E
(70Ω)
Equivalent circuit
* hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)