1
Power Transistors
2SD2374, 2SD2374A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1548 and 2SB1548A
n
Features
l High forward current transfer ratio h
FE
which has satisfactory linearity
l Low collector to emitter saturation voltage V
CE(sat)
l Full-pack package which can be installed to the heat sink with
one screw
n
Absolute Maximum Ratings (T
C
=25˚C)
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff
current
Emitter cutoff
current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CE
= 60V, V
BE
= 0
V
CE
= 80V, V
BE
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 60V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 3A
V
CE
= 4V, I
C
= 3A
I
C
= 3A, I
B
= 0.375A
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
I
C
= 1A, I
B1
= 0.1A, I
B2
= – 0.1A,
V
CC
= 50V
min
60
70
10
typ
30
0.5
2.5
0.4
max
200
200
300
300
1
250
1.8
1.2
Unit
m A
m A
mA
V
V
V
MHz
m s
m s
m s
*
h
FE1
Rank classification
Rank Q P
h
FE1
70 to 150 120 to 250
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
1
9.9– 0.3
15.0
–
0.5
13.7
–
0.2
4.2
–
0.2
4.6– 0.2
2.9– 0.2
0.8– 0.1
1.4– 0.2
23
f 3.2– 0.1
2.6– 0.1
0.55– 0.15
2.54– 0.3
5.08– 0.5
3.0
–
0.5
1.6– 0.2
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
80
60
80
6
5
3
25
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
2SD2374
2SD2374A
2SD2374
2SD2374A
T
C
=25 C
Ta=25 C
2SD2374
2SD2374A
2SD2374
2SD2374A