Transistors
1
2SD2358
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SB1538
a73 Features
• Low collector to emitter saturation voltage V
CE(sat)
: < 0.15 V
• Allowing supply with the radial taping
a73 Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
CBO
10 V
Collector to emitter voltage V
CEO
10 V
Emitter to base voltage V
EBO
5V
Peak collector current I
CP
1.2 A
Collector current I
C
1A
Collector power dissipation
*
P
C
1W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
CBO
V
CB
= 7 V, I
E
= 01µA
Collector to base voltage V
CBO
I
C
= 10 µA, I
E
= 0V
Collector to emitter voltage V
CEO
I
C
= 1 mA, I
B
= 01
Emitter to base voltage V
EBO
I
E
= 10 µA, I
C
= 05
Forward current transfer ratio h
FE
V
CE
= 2 V, I
C
= 100 mA 200 800
Collector to emitter saturation voltage V
CE(sat)
I
C
= 500 mA, I
B
= 20 mA 0.15 V
Transition frequency f
T
V
CB
= 5 V, I
E
= −50 mA, f = 200 MHz 120 MHz
Collector output capacitance C
ob
V
CB
= 20 V, I
E
= 0, f = 1 MHz 30 pF
a73 Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
2.5±0.1
4.5
±
0.1
14.5
±
0.5
2.5±0.5 2.5±0.5
2.5
±
0.1
6.9±0.1
1.05
±0.05 (1.45)
4.00.7 0.8
0.15
0.5
0.2
1.0
1.0
0.65 max.
0.45
+0.1
−0.05
0.45
+
0.1
−
0.05
321
1.2±0.1
0.65
max.
0.45
0.1
0.05
+
−
(HW Type)
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT2 Type Package
Note)
*
: Printed circuit board: Copper foil area of 1 cm
2
or more, and the
board thickness of 1.7 mm for the collector portion