Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
Driver Applications
Ordering number:ENN5311A
2SD2261
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1899TS (KOTO) X-7044 No.5311–1/3
4.5
1.6
0.50.4
1.5
1.0
2.5
4.25max
3.0
1.5
0.4
0.75
3 2 1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2038A
[2SD2261]
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Applications
· Motor drivers, printer hammer drivers, relay drivers.
Features
· Darlington connection.
· High DC current gain.
· DC current gain is less affected by temperature.
· Small-sized package.
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC
08V
egatloVrettimE-ot-rotcello
OEC
06V
egatloVesaB-ot-rettimEV
OBE
6V
tnerruCrotcelloCI
C
5.2A
)esluP(tnerruCrotcello
PC
5A
noitapissiDrotcelloCP
C
mm052(draobcimarecanodetnuoM
2
· )mm8.05.1W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC
V
BC
I,V06=
E
0=01Aµ
tnerruCffotuCrettimEI
OBE
V
BE
I,V5=
C
0=5.2Am
niaGtnerruCCD h
EF
V
EC
I,V2=
C
A1= 000200003
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC
I
C
I,A1=
B
Am2= 5.1V
egatloVnoitarutaSrettimE-ot-esaBV
)tas(EB
I
C
I,A1=
B
Am2=2V
egatloVnwodkaerBesaB-ot-rotcello
OBC)RB(
I
C
I,Aµ001=
E
0=08V
egatloVnwodkaerBrettimE-ot-rotcello
OEC)RB(
I
C
R,Am01=
EB
=¥ 06V
Marking : DR