1
Transistor
2SD2259
Silicon NPN epitaxial planer type
For low-frequency amplification
n
Features
l High foward current transfer ratio h
FE
.
l Low collector to emitter saturation voltage V
CE(sat)
.
l Allowing supply with the radial taping.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
MT2 Type Package
2.5– 0.1
4.5
–
0.1
14.5
–
0.5
2.5– 0.5 2.5– 0.5
2.5
–
0.1
6.9– 0.1
1.05
– 0.05 (1.45)
4.00.7 0.8
0.15
0.5
0.2
1.0
1.0
0.65 max.
0.45
+0.1
–0.05
0.45
+0.1 –0.05
321
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
*
T
j
T
stg
Ratings
20
20
15
1.5
0.7
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 15V, I
E
= 0
V
CE
= 15V, I
B
= 0
I
C
= 10m A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10m A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
*
I
C
= 500mA, I
B
= 50mA
*
V
CB
= 20V, I
E
= –20mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
20
20
15
1000
typ
0.15
55
10
max
1
10
2500
0.4
15
Unit
m A
m A
V
V
V
V
MHz
pF
1.2– 0.1
0.65
max.
0.45
0.1
0.05
+
–
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)
*2
Pulse measurement
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion