1
Power Transistors
2SD2242, 2SD2242A
Silicon NPN triple diffusion planar type Darlington
For power amplification
n
Features
l High foward current transfer ratio h
FE
l High-speed switching
l Allowing supply with the radial taping
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
80
60
80
5
8
4
15
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
2SD2242
2SD2242A
2SD2242
2SD2242A
T
C
=25 C
Ta=25 C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2
*
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 3V, I
C
= 0.5A
V
CE
= 3V, I
C
= 3A
V
CE
= 3V, I
C
= 3A
I
C
= 3A, I
B
= 12mA
I
C
= 5A, I
B
= 20mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 3A, I
B1
= 12mA, I
B2
= –12mA,
V
CC
= 50V
min
60
80
1000
2000
typ
20
0.5
4
1
max
200
200
500
500
2
10000
2.5
2
4
Unit
m A
m A
mA
V
V
V
MHz
m s
m s
m s
2SD2242
2SD2242A
2SD2242
2SD2242A
2SD2242
2SD2242A
*
h
FE2
Rank classification
Rank Q P
h
FE2
2000 to 5000 4000 to 10000
Unit: mm
Internal Connection
1:Base
2:Collector
3:Emitter
MT4 Type Package
1.010.0– 0.2
0.55– 0.1
2.5– 0.2 2.5– 0.2
4.2
–
0.2
13.0
–
0.2
2.5
–
0.2
18.0
–
0.5
Solder Dip
5.0– 0.1
2.25– 0.2
1.2– 0.1
0.65– 0.1
0.55– 0.1
C1.0
90°
C1.0
123
1.05– 0.10.35– 0.1
B
E
C