1
Power Transistors
2SD2220
Silicon NPN triple diffusion planar type Darlington
For low-frequency amplification
n
Features
l Suitable for the driver circuit of a motor, a printer hammer and
like that, since this transistor is designed for the high forward
current transfer ratio h
FE
l A shunt resistor is omitted from the driver
l Allowing supply with the radial taping
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (T
C
=25 C)
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
100
80
5
1.5
1
1.5
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 25V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 100m A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100m A, I
C
= 0
V
CE
= 10V, I
C
= 1A
I
C
= 1A, I
B
= 1mA
I
C
= 1A, I
B
= 1mA
V
CB
= 10V, I
E
= –50mA, f = 200MHz
min
100
80
5
4000
typ
150
max
100
100
20000
1.8
2.2
Unit
nA
nA
V
V
V
V
V
MHz
*
h
FE
Rank classification
Rank Q R
h
FE
4000 to 10000 8000 to 20000
Unit: mm
Internal Connection
1:Emitter
2:Collector
3:Base
MT3 Type Package
7.5– 0.2 4.5– 0.2
90°
0.8C0.8C
0.4– 0.1
0.8C
123
0.5– 0.1
0.7– 0.1
1.0– 0.1
0.85– 0.10.65– 0.1
0.7– 0.1
2.5
–
0.1
10.8
–
0.2
16.0
–
1.0
3.8
–
0.2
2.5– 0.22.5– 0.2 2.05– 0.2
B
E
C