1
Power Transistors
2SD2222
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1470
n
Features
l Optimum for 120W HiFi output
l High foward current transfer ratio h
FE
l Low collector to emitter saturation voltage V
CE(sat)
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
160
160
5
15
8
150
3.5
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2
*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 160V, I
E
= 0
V
CE
= 160V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 7A
I
C
= 7A, I
B
= 7mA
I
C
= 7A, I
B
= 7mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 7A, I
B1
= 7mA, I
B2
= –7mA,
V
CC
= 50V
min
160
10000
3500
typ
20
2
6
1.2
max
100
100
100
20000
3
3
Unit
m A
m A
m A
V
V
V
MHz
m s
m s
m s
*
h
FE2
Rank classification
T
C
=25 C
Ta=25 C
Rank Q P
h
FE2
3500 to 10000 7000 to 20000
Unit: mm
Internal Connection
1:Base
2:Collector
3:Emitter
TOP–3L Package
20.0– 0.5
6.0
10.0
26.0
–
0.5
20.0
–
0.5
1.5
2.5
Solder Dip
10.9– 0.5
123
2.0– 0.3
3.0– 0.3
1.0– 0.2
5.0– 0.3
3.0
4.0
2.0
5.45– 0.3
0.6– 0.2
1.5
2.7– 0.3
1.5
2.0
f 3.3– 0.2
3.0
B
C
E