2SD2167
Transistors
Rev.A 1/2
Power Transistor (31±4V, 2A)
2SD2167


zFeatures
1) Built-in zener diode between collector and base.
2) Zener diode has low voltage dispersion.
3) Strong protection against reverse power surges due
to low loads.
4) PC=2 W (on 40×40×0.7mm ceramic board)





zExternal dimensions (Unit : mm)
(3) Emitter
(2) Collector
(1) Base
EIAJ : SC-62
1.5
0.4
1.5 0.4
1.60.53.0
0.41.5
(3)
4.5
(1)
(2)
0.5
4.0
2.51.0
ROHM : MPT3


zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
31±4
31±4
5
2
0.5
2
150
−55 to +150
Unit
V
V
V
A(DC)
3
2
1A(Pulse)
W
W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1 Pw=20ms , duty=1 / 2
2 When mounted on a 40 × 40 × 0.7 mm ceramic board.
∗
∗
∗
∗



zPackaging specifications and hFE
Type 2SD2167
MPT3
NPQ
T100
DL∗
1000
Package
hFE
Code
Basic ordering unit (pieces)
Marking
Denotes hFE∗



zElectrical characteristics (Ta = 25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
27
27
5
−
−
−
56
−
−
−
−
−
−
−
−
−
100
25
35
35
−
1
1
1
270
−
−
V
V
V
µA
µA
V
−
MHz
pF
IC = 50µA
IC = 1mA
IE = 50µA
VCB = 20V
VEB = 5V
IC/IB = 2A/0.2A
− 0.25 0.5 V IC/IB = 1A/50mA
VCE/IC = 3V/0.5A
VCE = 3V , IE = −0.5A , f= 30MHz
VCB = 10V , IE = 0A , f = 1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.∗
∗
∗
∗