1
Transistor
2SD2184
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SB1438
n
Features
l High collector to emitter voltage V
CEO
.
l Low collector to emitter saturation voltage V
CE(sat)
.
l Allowing supply with the radial taping.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
MT2 Type Package
2.5– 0.1
4.5
–
0.1
14.5
–
0.5
2.5– 0.5 2.5– 0.5
2.5
–
0.1
6.9– 0.1
1.05
– 0.05 (1.45)
4.00.7 0.8
0.15
0.5
0.2
1.0
1.0
0.65 max.
0.45
+0.1
–0.05
0.45
+0.1 –0.05
321
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
*
T
j
T
stg
Ratings
150
150
5
1.5
1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 75V, I
E
= 0
I
C
= 10m A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10m A, I
C
= 0
V
CE
= 2V, I
C
= 100mA
V
CE
= 2V, I
C
= 500mA
I
C
= 500mA, I
B
= 25mA
*2
I
C
= 500mA, I
B
= 25mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
150
150
5
120
40
typ
0.11
0.8
90
12
max
0.1
340
0.3
1.2
20
Unit
m A
V
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank R S
h
FE1
120 ~ 240 170 ~ 340
1.2– 0.1
0.65
max.
0.45
0.1
0.05
+
–
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)
*1
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
*2
Pulse measurement