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1998©
Document No. D15606EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD2164
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
The 2SD2164 is a single power transistor developed especially
for high hFE. This transistor is ideal for simplifying drive circuits and
reducing power dissipation because its hFE is as high as that of
Darlington transistors, but it is a single transistor.
In addition, this transistor features a small resin insulated
package, thus contributing to high-density mounting and mounting
cost reduction.
FEATURES
• High hFE and low VCE(sat):
hFE ≅ 1,300 TYP. (VCE = 5.0 V, IC = 0.5 A)
VCE(SAT) ≅ 0.3 V TYP. (IC = 2.0 A, IB = 20 mA)
Full mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 60 V
Collector to emitter voltage VCEO 60 V
Emitter to base voltage VEBO 7.0 V
Collector current (DC) IC(DC) 3.0 A
Collector current (pulse) IC(pulse) 5.0
Note
A
Base current (DC) IB(DC) 0.5 A
Total power dissipation PT (TC = 25°C) 20 W
Total power dissipation PT (TA = 25°C) 2.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
Note PW ≤ 300 µs, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
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g20g17g3g37g68g86g72
g21g17g3g38g82g79g79g72g70g87g82g85
g22g17g3g40g80g76g87g87g72g85