2SD2163
器件描述：NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING
器件厂商：NEC [NEC]
文件大小：97.18KB，共4页
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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998©
Document No. D16139EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
DARLINGTON POWER TRANSISTOR
2SD2163
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND
LOW-SPEED HIGH-CURRENT SWITCHING
DATA SHEET
2002
The 2SD2163 is a mold power transistor developed for low-
speed high-current switching. This transistor is ideal for direct
driving from the IC output of devices such as pulse motor drivers
and relay drivers of PC terminals.
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
High DC current gain due to Darlington connection
hFE = 1,000 MIN. (@IC = 10 A)
Low collector saturation voltage:
VCE(sat) = 1.5 V MAX. (@IC = 10 A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 150 V
Collector to emitter voltage VCEO 100 V
Emitter to base voltage VEBO 8.0 V
Collector current (DC) IC(DC) ±10 A
Collector current (pulse) IC(pulse)* ±20 A
Base current (DC) IB(DC) 1.0 A
Total power dissipation PT (Tc = 25°C) 30 W
Total power dissipation PT (Ta = 25°C) 2.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current ICBO VCB = 100 V, IE = 0 10 µA
DC current gain hFE** VCE = 2.0 V, IC = 10 A 1,000 6,000 30,000
Collector saturation voltage VCE(sat)** IC = 10 A, IB = 25 mA 1.1 1.5 V
Base saturation voltage VBE(sat)** IC = 10 A, IB = 25 mA 1.8 2.0 V
Turn-on time ton 1.0 µs
Storage time tstg 5.0 µs
Fall time tf
IC = 10 A, IB1 = −IB2 = 25 mA
RL = 5.0 Ω, VCC ≅ 50 V
Refer to the test circuit.
2.0 µs
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking M L K J
hFE 1,000 to 3,000 2,000 to 5,000 4,000 to 10,000 8,000 to 30,000
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998©
Document No. D16139EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
DARLINGTON POWER TRANSISTOR
2SD2163
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND
LOW-SPEED HIGH-CURRENT SWITCHING
DATA SHEET
2002
The 2SD2163 is a mold power transistor developed for low-
speed high-current switching. This transistor is ideal for direct
driving from the IC output of devices such as pulse motor drivers
and relay drivers of PC terminals.
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
High DC current gain due to Darlington connection
hFE = 1,000 MIN. (@IC = 10 A)
Low collector saturation voltage:
VCE(sat) = 1.5 V MAX. (@IC = 10 A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 150 V
Collector to emitter voltage VCEO 100 V
Emitter to base voltage VEBO 8.0 V
Collector current (DC) IC(DC) ±10 A
Collector current (pulse) IC(pulse)* ±20 A
Base current (DC) IB(DC) 1.0 A
Total power dissipation PT (Tc = 25°C) 30 W
Total power dissipation PT (Ta = 25°C) 2.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current ICBO VCB = 100 V, IE = 0 10 µA
DC current gain hFE** VCE = 2.0 V, IC = 10 A 1,000 6,000 30,000
Collector saturation voltage VCE(sat)** IC = 10 A, IB = 25 mA 1.1 1.5 V
Base saturation voltage VBE(sat)** IC = 10 A, IB = 25 mA 1.8 2.0 V
Turn-on time ton 1.0 µs
Storage time tstg 5.0 µs
Fall time tf
IC = 10 A, IB1 = −IB2 = 25 mA
RL = 5.0 Ω, VCC ≅ 50 V
Refer to the test circuit.
2.0 µs
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking M L K J
hFE 1,000 to 3,000 2,000 to 5,000 4,000 to 10,000 8,000 to 30,000