2SD2170
Transistors
Rev.A 1/2
Medium Power Transistor
(Motor, Relay drive) (90 , 2A)
+20
−10
2SD2170


zFeatures
1) Built-in zener diode between collector and base.
2) Zener diode has low dispersion.
3) Strong protection against reverse power surges due to
"L" loads.
4) Darlington connection for high DC current gain.
5) Built-in resistor between base and emitter.
6) Built-in damper diode.


zExternal dimensions (Unit : mm)
(3) Emitter
(2) Collector
(1) Base
EIAJ : SC-62
1.5
0.4
1.5 0.4
1.60.53.0
0.41.5
(3)
4.5
(1)
(2)
0.5
4.0
2.51.0
ROHM : MPT3

zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
90
90
+20
+20
−10
−10
6
2
3
2
0.5
∗1
∗2
150
−55 to +150
Unit
V
V
V
A (DC)
A (Pulse)
W
°C
°C
∗1 Single pulse Pw=10ms,Duty=1/2
∗2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature



zPackaging specifications and hFE zEquivalent circuit
Type 2SD2170
MPT3
1k to 10k
T100
1000
DM
Package
hFE
Code
Basic ordering unit (pieces)
Marking

R2R1
E
B
C
C
B
E : Emitter
: Base
: Collector
R1 3.5kΩ
R2 300 Ω

zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Output capacitance
∗1 Measure using pulse current. ∗2 Transition frequency of the device.
BVCBO
BVCEO
ICBO
IEBO
hFE
fT
Cob
80
80
−
−
1000
−
−
−
−
−
−
−
80
25
110
110
10
3
10000
−
−
V
V
µA
mA
−∗1
∗2
∗1
MHz
pF
IC=50µA
IC=1mA
VCB=70V
VEB=5V
Collector-emitter saturation voltage VCE(sat) −−1.5 V IC/IB=1A/1mA
VCE=2V , IC=1A
VCE=5V , IE=−0.1A , f=30MHz
VCB=10V , IE=0A , f=1MHz