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Document No. D13178EJ3V0DS00 (3rd edition)
Date Published March 2004 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD2165
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
c 2002
The mark shows major revised points.










The 2SD2165 is a single power transistor developed especially
for high hFE. This transistor is ideal for simplifying drive circuits and
reducing power dissipation because its hFE is as high as that of
Darlington transistors, but it is a single transistor.
In addition, this transistor features a small resin-molded
insulation package, thus contributing to high-density mounting and
mounting cost reduction.

FEATURES
• High hFE and low VCE(sat):
hFE ≅ 1,300 TYP. (VCE = 5.0 V, IC = 1.0 A)
VCE(SAT) ≅ 0.3 V TYP. (IC = 3.0 A, IB = 30 mA)
Mold package that does not require an insulating board or
insulation bushing

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 100 V
Collector to emitter voltage VCEO 100 V
Emitter to base voltage VEBO 7.0 V
Collector current (DC) IC(DC) 6.0 A
Collector current (pulse) IC(pulse) 10
Note
A
Base current (DC) IB(DC) 1.0 A
Total power dissipation (TC = 25°C) PT 30 W
Total power dissipation (TA = 25°C) PT 2.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
Note PW ≤ 300 µs, duty cycle ≤ 10%

PACKAGE DRAWING (UNIT: mm)

10.0 ±0.3
3.2 ±0.2φ 2.7 ±0.2
1.3 ±0.20.7 ±0.1
2.54 TYP.2.54 TYP.
1.5 ±0.2
123
4 ±0.2 13.5 MIN.
12.0 ±0.2
15.0 ±0.3
3 ±0.1
4.5 ±0.2
2.5 ±0.1
0.65 ±0.1




Electrode Connection
1. Base
2. Collector
3. Emitter