©

1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3053
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No. D12912EJ3V0DS00 (3rd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark ! shows major revised points.
DESCRIPTION
The 2SK3053 is N-Channel MOS Field Effect Transistor
designed for high current switching applications in consumer
instruments.
FEATURES
• Low On-State Resistance
RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 13 A)
RDS(on)2 = 70 mΩ MAX. (VGS = 4.0 V, ID = 13 A)
• Low Ciss : Ciss = 790 pF TYP.
• Built-in Gate Protection Diode
• Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS(AC) ±20 V
Gate to Source Voltage VGSS(DC) +20, −10 V
Drain Current (DC) ID(DC) ±25 A
Drain Current (Pulse)
Note1
ID(pulse) ±75 A
Total Power Dissipation (TC = 25°C) PT 30 W
Total Power Dissipation (TA = 25°C) PT 2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current
Note2
IAS 12.5 A
Single Avalanche Energy
Note2
EAS 15.6 mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 30 V, RG = 25 Ω, VGS = 20 V → 0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3053 Isolated TO-220
(Isolated TO-220)
!