The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998©
Document No. D14864EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD2161
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
The 2SD2161 is a Darlington power transistor that can directly drive
from the IC output. This transistor is ideal for motor drivers and
solenoid drivers in such as OA and FA equipment.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting cost.
FEATURES
• High hFE due to Darlington connection
hFE ≥ 2,000 (VCE = 2.0 V, IC = 2.0 A)
Full mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage VCBO 100 V
Collector to emitter voltage VCEO 100 V
Emitter to base voltage VEBO 7.0 V
Collector current (DC) IC(DC) ±5.0 A
Collector current (pulse) IC(pulse) PW ≤ 300 µs,
duty cycle ≤ 10%
±10 A
Base current (DC) IB(DC) 0.5 A
TC = 25°C 20 WTotal power dissipation PT
TA = 25°C 2.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
ORDERING INFORMATION
Ordering Name Package
2SD2161 Isolated TO-220
(Isolated TO-220)
INTERNAL EQUIVALENT CIRCUIT
1. Base
2. Collector
3. Emitter