2SD2153
Transistors
Rev.A 1/2
High gain amplifier transistor (25V, 2A)
2SD2153


zFeatures
1) Low saturation voltage,
typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA
2) Excellent DC current gain characteristics.






zExternal dimensions (Unit : mm)
(3) Emitter
(2) Collector
(1) Base
EIAJ : SC-62
1.5
0.4
1.5 0.4
1.60.53.0
0.41.5
(3)
4.5
(1)
(2)
0.5
4.0
2.51.0
ROHM : MPT3


zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
30
25
6
2
2
0.5
150
−55 to +150
Unit
V
V
V
A(DC)
3 A(Pulse)
W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Single pulse, Pw=10ms ∗1
∗1
∗2
∗2 Mounted on a 40 40
t
0.7mm Ceramic substrate
+ +



zPackaging specifications and hFE
Type 2SD2153
MPT3
UVW
T100
DN
1000
Package
hFE
Code
Basic ordering unit (pieces)
Marking
Denotes hFE∗
∗



zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
30
25
6
−
−
560
−
−
−
−
−
−
−
−
110
22
−
−
−
0.5
0.5
2700
−
−
V
V
V
µA
µA
−
MHz
pF
IC = 50µA
IC = 1mA
IE = 50µA
VCB = 20V
VEB = 5V
− 0.12 0.5 V IC/IB = 1A/20mA
VCE/IC = 6V/0.5A
VCE = 10V , IE = −10mA , f= 100MHz
VCB = 10V , IE = 0A , f = 1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.∗
∗