147
2SD2141
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) θ j-a–t Characteristics
VCE(sat)–IB Characteristics (Typical)
Pc–Ta Derating
0
0
5
10
246
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Safe Operating Area (Single Pulse)
150mA
IB=1mA
2mA
4mA
18mA
20mA
120mA 90mA 60mA
0
3
2
1
0.2 10.5 105 20010050
Base Current IB(mA)
Collector Current I
C
(A)
1A
3A
5A
IC=7A
0.02 0.1 10.5 105
5000
10000
1000
500
100
10
50
Collector Current IC(A)
DC Current Gain h
FE
(VCE=2V)
Typ
0.1
1
5
0.5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
1ms
10ms
100ms
501051 100 500
0.01
0.05
0.1
1
0.5
10
20
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
DC
Without Heatsink
Natural Cooling
40
30
20
10
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
50x50x2
100x100x2
150x150x2
IC–VBE Temperature Characteristics (Typical)
0
10
5
0 2.0 2.41.0
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
hFE–IC Temperature Characteristics (Typical)
0.02 0.1 1.0 50.5 10
5000
10000
1000
500
100
50
20
Collector Current IC(A)
DC Current Gain h
FE
(VCE=2V)
125˚C
–55˚C
25˚C
fT–IE Characteristics (Typical)
(VCE=12V)
Emitter Current IE(A)
0.050.01 01 0.5 1 5
0
20
10
30
40
Cut-off Frequency f
T
(MH
Z
)
Typ
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
Silicon NPN Triple Diffused Planar Transistor
Application : Ignitor, Driver for Solenoid and Motor, and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SD2141
380±50
380±50
6
6(Pulse10)
1
35(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
2SD2141
10max
20max
330to430
1500min
1.5max
20typ
95typ
Unit
m A
mA
V
V
MHz
pF
Conditions
VCB=330V
VEB=6V
IC=25mA
VCE=2V, IC=3A
IC=4A, IB=20mA
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
(Ta=25°C) (Ta=25°C)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
External Dimensions FM20(TO220F)
ø3.3±0.2
10.1±0.2
4.0
±0.2
16.9
±0.3
13.0min
8.4
±0.2
0.8
±0.2
3.9 ±0.2
2.542.54
1.35±0.15
0.85
+0.2
-0.1
1.35±0.15
2.2±0.2
4.2±0.2
2.8
c
0.5
2.4±0.2
0.45
+0.2
-0.1
BEC
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
Built-in Avalanche Diode
for Surge Absorbing
Darlington
B
C
E
(1.5kΩ)(100Ω)
Equivalent circuit