1
Power Transistors
2SD2139
Silicon NPN triple diffusion planar type
For high-current amplification ratio, power amplification
n
Features
l High foward current transfer ratio h
FE
l Satisfactory linearity of foward current transfer ratio h
FE
l Allowing supply with the radial taping
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
80
60
6
6
3
1
15
2
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE
*
V
CE(sat)
f
T
Conditions
V
CB
= 80V, I
E
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 0.5A
I
C
= 2A, I
B
= 0.05A
V
CE
= 12V, I
C
= 0.2A, f = 10MHz
min
60
500
typ
50
max
100
100
100
2500
1
Unit
m A
m A
m A
V
V
MHz
*
h
FE
Rank classification
Rank Q P O
h
FE
500 to 1000 800 to 1500 1200 to 2500
T
C
=25 C
Ta=25 C
Unit: mm
1:Base
2:Collector
3:Emitter
MT4 Type Package
1.010.0– 0.2
0.55– 0.1
2.5– 0.2 2.5– 0.2
4.2
–
0.2
13.0
–
0.2
2.5
–
0.2
18.0
–
0.5
Solder Dip
5.0– 0.1
2.25– 0.2
1.2– 0.1
0.65– 0.1
0.55– 0.1
C1.0
90°
C1.0
123
1.05– 0.10.35– 0.1