1
Item Symbol Rating Unit
Drain-source voltage VDS 60
Continuous drain current ID ±45
Pulsed drain current ID(puls] ±180
Gate-source voltage VGS ±30
Maximum Avalanche Energy EAV *1 461.9
Max. power dissipation PD 40
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK2902-01MR FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Gate(G)
Source(S)
Drain(D)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
VDS=60V
VGS=±30V
ID=22.5A VGS=10V
ID=22.5A VDS=25V
VCC=30V ID=45A
VGS=10V
RGS=10 W
Min. Typ. Max. Units
V
V
µA
mA
nA
mW
S
pF
A
V
ns
µC
ns
Min. Typ. Max. Units
Thermal resistance
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
3.125
62.5
°C/W
°C/W
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA VGS=0V
ID=10mA VDS=VGS
Tch=25°C
VGS=0V Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
L=100
µ
H Tch=25°C
IF=45A VGS=0V Tch=25°C
IF=45A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
A
A
V
mJ
W
°C
°C
*1 L=0.304mH, Vcc=24V
60
2.5 3.0 3.5
10 500
0.2 1.0
10 100
12.0 14.5
10.0 25.0
2300 3450
910 1370
260 390
18 30
55 80
70 120
48 80
45
1.0 1.5
60
0.11
-55 to +150
TO-220F15
3. Source
2.54