2SD2121
器件描述:Silicon NPN Epitaxial
文件大小:31.02KB,共5页
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器件资料摘要:
2SD2121(L)/(S)
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB1407(L)/(S)
Outline
4
1
2
3
4
3
2
1
1. Base
2. Collector
3. Emitter
4. Collector
DPAK
S Type
L Type
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
35 V
Collector to emitter voltage V
CEO
35 V
Emitter to base voltage V
EBO
5V
Collector current I
C
2.5 A
Collector peak current I
C(peak)
3A
Collector power dissipation P
C
*
1
18 W
Junction temperature Tj 150 C
Storage temperature Tstg –55 to +150 C
Note: 1. Value at T
C
= 25 C.