144
Darlington 2SD2081
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)
Pc–Ta Derating
0
3
2
1
0.2 10.5 105 20010050
Base Current IB(mA)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
1A
5A
IC=10A
Safe Operating Area (Single Pulse)
0
0
5
10
15
213546
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
1mA
2mA
3mA
5mA
0.7mA
10mA
50mA
IB=0.5mA
0
10
8
6
4
2
0231
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=4V)
125˚C (Case Temp) 25˚C (Case Temp)
–30˚C (Case Temp)
0.03 0.1 10.5 105
5000
20000
10000
1000
500
100
30
50
Collector Current IC(A)
DC Current Gain h
FE
(VCE=4V)
Typ
0.03 0.1 10.5 105
5000
20000
10000
1000
500
100
30
50
Collector Current IC(A)
DC Current Gain h
FE
(VCE=4V)
125˚C
–30˚C
25˚C
1ms
10ms
10 5053 100 200
0.05
0.1
1
0.5
10
30
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
DC
Without Heatsink
Natural Cooling
0.2
1
5
0.5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
30
20
10
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
fT–IE Characteristics (Typical)
–0.05 –0.1 –0.5 –1 –5 –10
0
80
100
60
40
20
120
Cut-off Frequency f
T
(MH
Z
)
(VCE=12V)
Emitter Current IE(A)
Typ
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1259)
Application : Driver for Solenoid, Motor and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SD2081
120
120
6
10(Pulse15)
1
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
2SD2081
10max
10max
120min
2000min
1.5max
2.0max
60typ
95typ
Unit
m A
mA
V
V
V
MHz
pF
Conditions
VCB=120V
VEB=6V
IC=10mA
VCE=4V, IC=5A
IC=5A, IB=5mA
IC=5A, IB=5mA
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
(Ta=25°C) (Ta=25°C)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
External Dimensions FM20(TO220F)
ø3.3±0.2
10.1±0.2
4.0
±0.2
16.9
±0.3
13.0min
8.4
±0.2
0.8
±0.2
3.9 ±0.2
2.542.54
1.35±0.15
0.85
+0.2
-0.1
1.35±0.15
2.2±0.2
4.2±0.2
2.8
c
0.5
2.4±0.2
0.45
+0.2
-0.1
BEC
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B
C
E
(2kΩ)(200Ω)
Equivalent
circuit