146
Darlington 2SD2083
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)
Pc–Ta Derating
0
0
20
30
10
40
213546
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
3mA
5mA
8mA
12mA
30mA
20mA
IB=1.5mA
Safe Operating Area (Single Pulse)fT–IE Characteristics (Typical)
0
3
2
1
10.5 105 50010050
Base Current IB(mA)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
6A
12A
IC=25A
0.2 0.5 1 5 10 40
5000
20000
10000
1000
500
100
Collector Current IC(A)
DC Current Gain h
FE
(VCE=4V)
Typ
–0.5–0.1 –1 –5 –10
0
50
100
Cut-off Frequency f
T
(MH
Z
)
(VCE=12V)
Emitter Current IE(A)
Typ
0.1
1
3
0.5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
1ms
10ms
10 5053 100 200
0.2
1
0.5
10
50
100
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
DC
Without Heatsink
Natural Cooling
120
100
50
3.5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
0
25
20
10
0 2 2.21
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
hFE–IC Temperature Characteristics (Typical)
0.02 1 105 40
5000
20000
10000
1000
500
100
Collector Current IC(A)
DC Current Gain h
FE
(VCE=4V)
125˚C
–30˚C
25˚C
0.5
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1383)
Application : Driver for Solenoid, Motor and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SD2083
120
120
6
25(Pulse40)
2
120(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
2SD2083
10max
10max
120min
2000min
1.8max
2.5max
20typ
340typ
Unit
m A
mA
V
V
V
MHz
pF
Conditions
VCB=120V
VEB=6V
IC=25mA
VCE=4V, IC=12A
IC=12A, IB=24mA
IC=12A, IB=24mA
VCE=12V, IE=–1A
VCB=10V, f=1MHz
(Ta=25°C) (Ta=25°C)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
19.9
±0.3
4.0
2.0
5.0
±0.2
1.8
ø3.2±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45±0.1 5.45±0.1
C
4.8±0.2
0.65
+0.2
-0.1
1.4
2.0±0.1
a
b
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
24
RL
(Ω)
2
IC
(A)
12
VBB2
(V)
–5
IB2
(mA)
–24
ton
(m s)
1.0typ
tstg
(m s)
6.0typ
tf
(m s)
1.0typ
IB1
(mA)
24
VBB1
(V)
10
Weight : Approx 6.0g
a. Type No.
b. Lot No.
B
C
E
(2kΩ)(100Ω)
Equivalent
circuit