2SD2017
器件描述:Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Relay and Motor and General Purpose)
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器件资料摘要:
142
Darlington 2SD2017
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical)
IC–VBE Temperature Characteristics (Typical)
Pc–Ta Derating
35
30
20
10
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
50x50x2
100x100x2
150x150x2
0
0
4
2
6
3
1
5
21 3456
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
40mA
20mA
8mA
4mA
2mA
1mA
IB=0.4mA
0.03 0.1 10.5 65
5000
10000
1000
500
100
30
50
Collector Current IC(A)
DC Current Gain h
FE
(VCE=2V)
Typ
VCE(sat)–IB Characteristics (Typical)
0
3
2
1
0.2 0.5 5 101 100 500 100050
Base Current IB(mA)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
IC=1A
IC=3A
IC=8A
0
3
4
5
6
2
1
021
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=2V)
0.03 0.1 10.5 5 6
5000
10000
1000
500
100
50
30
Collector Current IC(A)
DC Current Gain h
FE
(VCE=2V)
125˚C
25˚C
hFE–IC Temperature Characteristics (Typical)
–30˚C
θ j-a–t Characteristics
0.3
1
5
0.5
1 10 10050 5005 1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
fT–IE Characteristics (Typical)
–0.02 –0.05 –0.1 –0.5 –1 –5–6
0
20
10
30
Cut-off Frequency f
T
(MH
Z
)
(VCE=12V)
Emitter Current IE(A)
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
Typ
Safe Operating Area (Single Pulse)
103 5 30010050
0.05
0.02
1
0.1
0.5
10
20
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
10ms
1ms
D.C (T
C
=25C)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
Silicon NPN Triple Diffused Planar Transistor
Application : Driver for Solenoid, Relay and Motor and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SD2017
300
250
20
6
1
35(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
2SD2017
100max
10max
250min
2000min
1.5max
2.0max
20typ
65typ
Unit
m A
mA
V
V
V
MHz
pF
Conditions
VCB=300V
VEB=20V
IC=25mA
VCE=2V, IC=2A
IC=2A, IB=2mA
IC=2A, IB=2mA
VCE=12V, IE=–1A
VCB=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
External Dimensions FM20(TO220F)
ø3.3±0.2
10.1±0.2
4.0
±0.2
16.9
±0.3
13.0min
8.4
±0.2
0.8
±0.2
3.9 ±0.2
2.542.54
1.35±0.15
0.85
+0.2
-0.1
1.35±0.15
2.2±0.2
4.2±0.2
2.8
c
0.5
2.4±0.2
0.45
+0.2
-0.1
BEC
a
b
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
100
RL
(Ω)
50
IC
(A)
2
VBB2
(V)
–5
IB2
(mA)
–10
ton
(m s)
0.6typ
tstg
(m s)
16.0typ
tf
(m s)
3.0typ
IB1
(mA)
5
VBB1
(V)
10
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B
(4kΩ)
C
E
Equivalent
circuit