1
Transistor
2SD1995
Silicon NPN epitaxial planer type
For low-frequency amplification
n
Features
l High foward current transfer ratio h
FE
.
l Low collector to emitter saturation voltage V
CE(sat)
.
l High emitter to base voltage V
EBO
.
l Allowing supply with the radial taping.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
MT1 Type Package
6.9– 0.1 1.05
– 0.05
2.5– 0.1
3.5
–
0.1
14.5
–
0.5
(1.45)
0.8
0.7 4.0
0.15
0.85
0.8
1.0
0.65 max.
0.45
+0.1
–0.05
0.45
+0.1 –0.05
2.5– 0.5 2.5– 0.5
2.5
–
0.1
123
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
50
40
15
100
50
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
f
T
NV
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10m A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10m A, I
C
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 10mA, I
B
= 1mA
V
CB
= 10V, I
E
= –2mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100kW , Function = FLAT
min
50
40
15
400
typ
0.05
200
80
max
100
1
2000
0.2
Unit
nA
m A
V
V
V
V
MHz
mV
*
h
FE
Rank classification
Rank R S T
h
FE
400 ~ 800 600 ~ 1200 1000 ~ 2000
1.2– 0.1
0.65
max.
0.45
0.1
0.05
+
–
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)