1
Transistor
2SD1979
Silicon NPN epitaxial planer type
For low-voltage output amplification
For muting
For DC-DC converter
n
Features
l Low ON resistance R
on
.
l High foward current transfer ratio h
FE
.
l S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter EIAJ:SC–70
3:Collector S–Mini Type Package
2.1– 0.1
1.3
–
0.1
0.9
–
0.1
0.7
–
0.1
0.3
+0.1 –0
0.15
+0.1 –0.05
2.0
–
0.2
1.25– 0.1 0.4250.425
1
3
2
0.65
0.2
0
.65
0 to 0.1
0.2– 0.1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
50
20
25
500
300
150
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Collector output capacitance
ON resistanse
Symbol
I
CBO
I
EBO
V
CEO
h
FE
*1
V
CE(sat)
V
BE
f
T
C
ob
R
on
*2
Conditions
V
CB
= 50V, I
E
= 0
V
EB
= 25V, I
C
= 0
I
C
= 1mA, I
B
= 0
V
CE
= 2V, I
C
= 4mA
I
C
= 30mA, I
B
= 3mA
V
CE
= 2V, I
C
= 4mA
V
CB
= 6V, I
E
= –4mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
20
500
typ
0.6
80
4.5
1.0
max
1
1
2500
0.1
Unit
m A
m A
V
V
V
MHz
pF
W
*1
h
FE
Rank classification
*2
R
on
Measurement circuit
V
B
I
B
=1mA
R
on
= 5 1000(W )
f=1kHz
V=0.3V
1kW
V
A
V
V
V
A
–V
B
V
B
Rank S T
h
FE
500 ~ 1500 800 ~ 2500
Marking Symbol 3WS 3WT
Marking symbol : 3W