2SD1908
Ordering number : EN3971
CRT Display Horizontal Deflection Output
Applications
NPN Epitaxial Planar Silicon Transistor
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
11697YK (KOTO) 8-0537 No.3971-1/3
Package Dimensions
unit: mm
2049B-TO-220MF
[2SD1908]
E : Emitter
C : Collector
B : Base
SANYO : TO-220MF
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
330 V
Collector-to-Emitter Voltage V
CEO
150 V
Emitter-to-Base Voltage V
EBO
6V
Collector Current I
C
7A
Collector Current (Pulse) I
CP
12 A
Base Current I
B
4A
Collector Dissipation P
C
1.65 W
Tc=25°C 50 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg –55 to +150 °C
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Ratings
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=200V, I
E
=0 100 µA
Emitter Cutoff Current I
EBO
V
EB
=5V, I
C
=0 100 mA
DC Current Gain h
FE(1)
V
CE
=1V, I
C
=1A 15
h
FE(2)
V
CE
=1V, I
C
=5A 10 50
Gain-Bandwidth Product f
T
V
CE
=10V, I
C
=0.5A 10 40 MHz
C-E Saturation Voltage V
CE(sat)
I
C
=5A, I
B
=0.5A 1 V
B-E Saturation Voltage V
BE(sat)
I
C
=5A, I
B
=0.5A 1.2 V
C-B Breakdown Voltage V
(BR)CBO
I
C
=1mA, I
E
=0 330 V
C-E Breakdown Voltage V
(BR)CEO
I
C
=1mA, R
BE
=¥ 150 V
E-B Breakdown Voltage V
(BR)EBO
I
E
=1mA, I
C
=0 6 V
Fall Time t
f
I
C
=5A, I
B
1=–I
B
2=0.5A 0.5 µs
Features
• Fast switching speed.
• Especially suited for use in high-definition CRT display :
V
CC
=6 to 12V.
• Wide ASO and highly resistant to breakdown.