2SD2195 / 2SD1980 / 2SD1867
Transistors
Rev.B 1/3
Power Transistor (100V, 2A)
2SD2195 / 2SD1980 / 2SD1867


zFeatures
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SB1580 / 2SB1316.


zEquivalent circuit
R1 3.5kΩ
R2 300Ω
B
C
E
C
B
E
: Base
: Collector
: Emitter
R1 R2



zAbsolute maximum ratings (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
∗1 Single pulse Pw=100ms
∗2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
∗3 Printed circuit board, 1.7mm thick, collector plating 100mm
2
or larger.
Parameter Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
100
100
6
2
2
1
1
10
150
−55 to +150
Unit
V
V
V
A(DC)
3 A(Pulse)
W
W
W(Tc=25°C)
2SD2195
2SD1980
2SD1867
°C
°C
∗1
∗2
∗3
0.5











zExternal dimensions (Unit : mm)
2SD2195
(3) Emitter
(2) Collector
(1) Base
EIAJ : SC-62
2SD1980
(3) Emitter
(2) Collector
(1) Base
ROHM : CPT3
EIAJ : SC-63
ROHM : MPT3
2SD1867
(2) Collector
(1) Emitter
ROHM : ATV
Taping specifications
(3) Base
0.451.05
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
1.5
0.4
1.6
0.5
3.0
0.40.4
1.51.5
(3)(2)(1)
4.5
0.5
4.0
2.5
1.0
6.5
2.3
(2) (3)
0.65
0.9
(1)
0.75
2.30.9
5.1
1.5
5.5
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5