2SD1843
器件描述：NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
器件厂商：NEC [NEC]
文件大小：76.62KB，共4页
Sponsor by e络盟器件资料摘要：
1998©
Document No. D16200EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
DARLINGTON POWER TRANSISTOR
2SD1843
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SD1843 is a Darlington connection transistor with on-chip
dumper diode in collector to emitter and zener diode in collector to
base. This transistor is ideal for use in acuator drives such as
motors, relays, and solenoids.
FEATURES
• High DC current gain due to Darlington connection
High surge resistance due to on-chip protection elements:
C to E: Dumper diode
C to B: Zener diode
Low collector saturation voltage
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 60±10 V
Collector to emitter voltage VCEO 60±10 V
Emitter to base voltage VEBO 7.0 V
Collector current (DC) IC(DC) ±1.0 A
Collector current (pulse) IC(pulse)* ±2.0 A
Total power dissipation PT(Ta = 25°C) 1.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current ICBO VCB = 40 V, IE = 0 0.5 µA
Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 1.0″ mA
DC current gain hFE2** VCE = 2.0 V, IC = 0.2 A 1000
DC current gain hFE2** VCE = 2.0 V, IC = 0.5 A 2000 30000
Collector saturation voltage VCE(sat)** IC = 0.5 A, IB = 0.5 mA 1.5 V
Base saturation voltage VBE(sat)** IC = 0.5 A, IB = 0.5 mA 2.0 V
Turn-on time tON 0.5 µs
Storage time tstg 1.0 µs
Fall time tf
IC = 0.5 A, RL = 100 Ω
IB1 = −IB2 = 0.1 mA, VCC = 50 V
1.0 µs
* *Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking M L K
hFE2 2000 to 5000 4000 to 10000 8000 to 30000
Document No. D16200EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
DARLINGTON POWER TRANSISTOR
2SD1843
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SD1843 is a Darlington connection transistor with on-chip
dumper diode in collector to emitter and zener diode in collector to
base. This transistor is ideal for use in acuator drives such as
motors, relays, and solenoids.
FEATURES
• High DC current gain due to Darlington connection
High surge resistance due to on-chip protection elements:
C to E: Dumper diode
C to B: Zener diode
Low collector saturation voltage
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 60±10 V
Collector to emitter voltage VCEO 60±10 V
Emitter to base voltage VEBO 7.0 V
Collector current (DC) IC(DC) ±1.0 A
Collector current (pulse) IC(pulse)* ±2.0 A
Total power dissipation PT(Ta = 25°C) 1.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current ICBO VCB = 40 V, IE = 0 0.5 µA
Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 1.0″ mA
DC current gain hFE2** VCE = 2.0 V, IC = 0.2 A 1000
DC current gain hFE2** VCE = 2.0 V, IC = 0.5 A 2000 30000
Collector saturation voltage VCE(sat)** IC = 0.5 A, IB = 0.5 mA 1.5 V
Base saturation voltage VBE(sat)** IC = 0.5 A, IB = 0.5 mA 2.0 V
Turn-on time tON 0.5 µs
Storage time tstg 1.0 µs
Fall time tf
IC = 0.5 A, RL = 100 Ω
IB1 = −IB2 = 0.1 mA, VCC = 50 V
1.0 µs
* *Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking M L K
hFE2 2000 to 5000 4000 to 10000 8000 to 30000