138
2SD1796
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) θ j-a–t Characteristics
Pc–Ta Derating
0
0
1
2
3
4
2134
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
I
B
=20mA
0.3mA
1.0mA
0.4mA
0.5mA
0.8mA
0.6mA
Safe Operating Area (Single Pulse)fT–IE Characteristics (Typical)
410.1 0.50.05
50
500
100
1000
10000
20000
5000
Collector Current IC(A)
DC Current åGain h
FE
(VCE=4V)
–0.01 –0.1 –1 –4
0
20
40
120
100
60
80
Cut-off Frequency f
T
(MH
Z
)
(VCE=10V)
Emitter Current IE(A)
Typ
10 503 5 100
0.05
0.1
1
0.5
10
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
DC
100ms
10ms
1ms
0.5
1
5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
Typ
VCB=10V
IE=–2V
VCE(sat)–IB Characteristics (Typical)
0
3
2
1
0.2 0.5 5 101 10050
Base Current IB(mA)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
IC
=4A
IC
=3A
IC
=2A
IC=1A
IC–VBE Temperature Characteristics (Typical)
021
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=2V)
0
3
4
2
1 125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
Collector Current IC(A)
DC Current åGain h
FE
0.05 0.5 1 40.1
100
50
500
1000
5000
10000
20000
(VCE=4V)
125˚C
25˚C
–30˚C
30
20
10
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
150x150x2
50x50x2
100x10
0
x
2
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
Silicon NPN Triple Diffused Planar Transistor
Application : Driver for Solenoid, Relay and Motor and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SD1796
60±10
60±10
6
4
0.5
25(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
2SD1796
10max
10max
60±10
2000min
1.5max
60typ
45 typ
Unit
m A
mA
V
V
MHz
pF
Conditions
VCB=50V
VEB=6V
IC=10mA
VCE=4V, IC=3A
IC=3A, IB=10mA
VCE=12V, IE=–0.2A
VCB=10V, f=1MHz
(Ta=25°C) (Ta=25°C)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
External Dimensions FM20(TO220F)
ø3.3±0.2
10.1±0.2
4.0
±0.2
16.9
±0.3
13.0min
8.4
±0.2
0.8
±0.2
3.9 ±0.2
2.542.54
1.35±0.15
0.85
+0.2
-0.1
1.35±0.15
2.2±0.2
4.2±0.2
2.8
c
0.5
2.4±0.2
0.45
+0.2
-0.1
BEC
a
b
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
30
RL
(Ω)
10
IC
(A)
3
VBB2
(V)
–5
IB2
(mA)
–10
ton
(m s)
1.0typ
tstg
(m s)
4.0typ
tf
(m s)
1.5typ
IB1
(mA)
10
VBB1
(V)
10
Weight : Approx 2.0g
a. Type No.
b. Lot No.
Built-in Avalanche Diode
for Surge Absorbing
Darlington
B
C
E
(3kΩ)(150Ω)
Equivalent
circuit