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2SD1793

器件描述:Darlington Transistor(10A NPN)
器件厂商:SHINDENGEN [Shindengen Electric Mfg.Co.Ltd]
文件大小:467.69KB,共9页
Sponsor by e络盟
器件资料摘要:
Unit : mm
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
RATINGS
SHINDENGEN
OUTLINE DIMENSIONS
Case : ITO-220
Darlington Transistor
10A NPN
2SD1793
(TP10L10)
●Absolute Maximum Ratings
Item Symbol Conditions Ratings Unit
Storage Temperature Tstg -55~+150 ℃
Junction Temperature Tj +150 ℃
Collector to Base Voltage V CBO 100 V
Collector to Emitter Voltage V CEO 100 V
Emitter to Base Voltage V EBO 7 V
Collector Current DC IC 10 A
Collector Current Peak ICP 15 A
Base Current DC IB 0.5 A
Base Current Peak IBP 1.0 A
Total Transistor Dissipation PT Tc = 25℃ 50 W
Dielectric Strength Vdis Terminals to case AC 1 minute 2 kV
Mounting Torque TOR (Recommended torque : 0.3Nnull) 0.5 Nnull
●Electrical Characteristics (Tc=25℃)
Item Symbol Conditions Ratings Unit
Collector Cutoff Current ICBO V CB = 100V Max 0.1 mA
ICEO V CE = 100V Max 0.1
Emitter Cutoff Current IEBO V EB = 7V Max 5 mA
DC Current Gain h FE V CE = 3V, IC = 5A Min 1,500
Max 30,000
Collector to Emitter Saturation Voltage V CE(sat) IC = 5A Max 1.5 V
Base to Emitter Saturation Voltage V BE (sat) IB = 10mA Max 2.0 V
Thermal Resistance θjc Junction to case Max 2.5 ℃/W
Transition Frequency f T V CE = 10V, IC = 1A TYP 20 MHz
Turn on Time ton Max 2
IC = 5A
Storage Time ts IB1 = 5mA, IB2 = 10mA Max 12 μs
RL = 6Ω
Fall Time tf V BB2 = 4V Max 5