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2SD1785

器件描述:Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose)
器件厂商:SANKEN [Sanken electric]
文件大小:25.92KB,共1页
Sponsor by e络盟
器件资料摘要:
137
Darlington 2SD1785
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)
Pc–Ta Derating
Safe Operating Area (Single Pulse)fT–IE Characteristics (Typical)
0.4 21
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=2V)
0.5
1
5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
30
20
10
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
–0.05 –0.1 –1–0.5 –8–5
0
50
120
100
Cut-off Frequency f
T
(MH
Z
)
(VCE=12V)
Emitter Current IE(A)
Typ
0
0
2
4
8
6
264
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
0.7mA
1.5mA
1mA
2mA
3mA
5mA
10mA
20mA
0.5mA
0.4mA
IB=0.3mA
0
6
8
4
2 125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
0.03 0.1 1 5 10
100
500
1000
10000
5000
Collector Current IC(A)
DC Current Gain h
FE
(VCE=2V)
0.5
Typ
103 5 20010050
0.05
1
0.1
0.5
10
20
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
DC
10ms
1ms
VCE(sat)–IB Characteristics (Typical)
0
3
2
1
0.3 5 101 10050
Base Current IB(mA)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
IC=6A
2A
4A
Collector Current IC(A)
DC Current Gain h
FE
0.03 0.05 0.5 1 5 100.1
100
50
30
500
1000
5000
10000
(VCE=2V)
125˚C
25˚C
–30˚C
hFE–IC Temperature Characteristics (Typical)
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1258)
Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SD1785
120
120
6
6(Pulse10)
1
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
2SD1785
10max
10max
120min
2000min
1.5max
100typ
70typ
Unit
m A
mA
V
V
MHz
pF
Conditions
VCB=120V
VEB=6V
IC=10mA
VCE=2V, IC=3A
IC=2A, IB=3mA
VCE=12V, IE=–0.1A
VCB=10V, f=1MHz
(Ta=25°C) (Ta=25°C)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
External Dimensions FM20(TO220F)
ø3.3±0.2
10.1±0.2
4.0
±0.2
16.9
±0.3
13.0min
8.4
±0.2
0.8
±0.2
3.9 ±0.2
2.542.54
1.35±0.15
0.85
+0.2
-0.1
1.35±0.15
2.2±0.2
4.2±0.2
2.8
c
0.5
2.4±0.2
0.45
+0.2
-0.1
BEC
a
b
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
30
RL
(Ω)
10
IC
(A)
3
VBB2
(V)
–1.5
IB2
(mA)
–3
ton
(m s)
0.5typ
tstg
(m s)
5.5typ
tf
(m s)
1.5typ
IB1
(mA)
3
VBB1
(V)
10
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B
C
E
(2.5kΩ)(200Ω)
Equivalent
circuit