2SD1760 / 2SD1864
Transistors
Power Transistor (50V, 3A)
2SD1760 / 2SD1864
!Features
1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A)
2) Complements the 2SB1184 / 2SB1243.
!Structure
Epitaxial planar type
NPN silicon transistor
!External dimensions (Units : mm)
(1) Base
(2) Collector
(3) Emitter
(1) Emitter
(2) Collector
(3) Base
ROHM : CPT3
EIAJ : SC-63 ROHM : ATV
1.0
6.8±0.2
2.5±0.2
1.05 0.45±0.1
2.54 2.54
0.5±0.1
0.9 4.4
±
0.2
14.5
±
0.5
(1) (2) (3)
0.65Max.
2SD1760 2SD1864
−0.1
+0.2
−0.1
+0.2
+0.3
−
0.1
2.3±0.22.3±0.2
0.65±0.1
0.9
0.75
1.0±0.2
0.55±0.1
9.5±0.5
5.5
1.5±0.3
2.5
1.5
2.3
0.5±0.1
6.5±0.2
5.1
C0.5
(3)(2)(1)
0.9
!Absolute maximum ratings (Ta = 25°C)
Parameter Symbol Limits Unit
VCBO 60 V
VCEO 50 V
VEBO 5V
IC
3 A (DC)
4.5 A (Pulse)
*
1
Tj 150 °C
Tstg −55~+150 °C
2SD1864
2SD1760
1
15 W (Tc =25°C)*2
PC
*
1 Single pulse, PW = 100ms
*
2 Printed circuit board, 1.7mm thick, collector copper plating 100mm
2
or larger.
W
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power
dissipation