2SD1782K
Transistors
Rev.A 1/3
Power Transistor (80V, 0.5A)
2SD1782K


zFeatures
1) Low VCE(sat).
VCE(sat) =0.2V(Typ.)
(IC / IB=0.5 A / 50mA)
2) High VCEO, VCEO=80V
3) Complements the 2SB1198K.



zStructure
Epitaxial planar type
NPN silicon transistor


zExternal dimensions (Unit : mm)
0~0.1
2.8
±
0.2
1.6
0.3~0.6
1.1
0.8±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.95 0.95
+
0.2
−
0.1
−0.1
+0.2
+0.1
−0.06+0.1
−0.05
(2)(1)
(3)
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59 Abbreviated symbol : AJ
∗
All terminals have
same dimensions
∗
Denotes hFE


zAbsolute maximum ratings (Ta=25°C)
Parameter
VCBO
VCEO
VEBO
PC
Tj
Tstg
80 V
V
V
A
W
°C
°C
80
5
0.5IC
0.2
150
−55 to +150
Symbol Limits Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature