1
Power Transistors
2SD1776, 2SD1776A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
n
Features
l High foward current transfer ratio h
FE
l Satisfactory linearity of foward current transfer ratio h
FE
l Full-pack package which can be installed to the heat sink with
one screw
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
80
100
60
80
6
4
2
0.5
25
2
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
2SD1776
2SD1776A
2SD1776
2SD1776A
T
C
=25 C
Ta=25 C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff
current
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE
*
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
Conditions
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 300mA
I
C
= 1A, I
B
= 25mA
I
C
= 1A, I
B
= 25mA
V
CE
= 12V, I
C
= 200mA, f = 10MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
I
C
= 1A, I
B1
= 25mA, I
B2
= –25mA,
V
CC
= 50V
min
60
80
500
typ
40
30
0.6
2.5
1
max
100
100
100
100
1500
1
1.2
Unit
m A
m A
m A
V
V
V
MHz
pF
m s
m s
m s
2SD1776
2SD1776A
2SD1776
2SD1776A
*
h
FE
Rank classification
Rank Q P
h
FE
500 to 1000 800 to 1500
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0– 0.2
5.5– 0.2
7.5
–
0.2
16.7
–
0.3
0.7
–
0.1
14.0
–
0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4– 0.1
1.3– 0.2
0.8– 0.1
2.54– 0.25
5.08– 0.5
213
2.7– 0.2
4.2– 0.2
4.2
–
0.2
f 3.1– 0.1