2SD1767 / 2SD1859
Transistors
Rev.A 1/2
Medium power transistor (80V, 0.7A)
2SD1767 / 2SD1859


zFeatures
1) High breakdown voltage, BVCEO=80V, and
high current, IC=0.7A.
2) Complements the 2SB1189 / 2SB1238.


zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
80
80
5
0.7
2
1
150
−55 to +150
Unit
V
V
V
A(DC)
1 A(Pulse)
0.5
∗3
∗2
∗1
2SD1859
2SD1767
W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power
dissipation
∗1 Pw=10ms, duty=1/2
∗2 When mounted on a 40×40×0.7 mm ceramic board.
∗3 Printed circuit board 1.7 mm thick, collector plating 1cm
2
or larger.



zPackaging specifications and hFE
Type 2SD1767
MPT3
PQR
DC
∗
T100
1000
2SD1859
ATV
QR
−
TV2
2500
∗
Denotes hFE
Package
hFE
Marking
Code
Basic ordering unit (pieces)



zExternal dimensions (Unit : mm)
(1) Emitter
(2) Collector
(3) Base
0.451.05
Taping specifications
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
2SD1767
ROHM : MPT3
EIAJ : SC-62
2SD1859
ROHM : ATV
(1) Base
(2) Collector
(3) Emitter
1.5
0.4
1.5 0.4
1.60.53.0
0.41.5
(3)
4.5
(1)
(2)
0.5
4.0
2.51.0



zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
80
80
5
−
−
−
−
−
−
−
−
−
−
0.2
120
10
−
−
−
0.5
0.5
0.4
−
−
V
V
V
µA
µA
V
MHz
pF
IC=50µA
IC=2mA
IE=50µA
VCB=50V
VEB=4V
hFE 120 − 390 − VCE/IC=3V/0.1A
IC/IB=500mA/50mA
VCE=10V, IE=−50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance