1
Power Transistors
2SD1755
Silicon NPN epitaxial planar type
For power amplification with high forward current transfer ratio
n
Features
l High forward current transfer ratio h
FE
which has satisfactory
linearity
l High emitter to base voltage V
EBO
l I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
100
60
15
12
6
3
15
1.3
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE
*
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 100V, I
E
= 0
V
EB
= 15V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 1A
I
C
= 5A, I
B
= 0.1A
V
CE
= 12V, I
C
= 0.5A, f = 10MHz
I
C
= 5A, I
B1
= 0.1A, I
B2
= – 0.1A,
V
CC
= 50V
min
60
300
0.3
typ
50
1.5
0.6
max
100
100
2000
0.5
Unit
m A
m A
V
V
MHz
m s
m s
m s
*
h
FE
Rank classification
Rank Q P
h
FE
300 to 1200 800 to 2000
T
C
=25 C
Ta=25 C
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package (Y)
7.2
–
0.3
7.0– 0.3
3.0– 0.2
3.5– 0.2
10.0
+0.3 –0.
0.8
–
0.2
1.0
–
0.2
4.6– 0.4
213
1.1– 0.1
0.75– 0.1
2.3– 0.2
0.85– 0.1
0.4– 0.1
7.0– 0.3
0.75– 0.1
2.3– 0.2
4.6– 0.4
1.1– 0.1
10.2
–
0.3
7.2
–
0.3
2.0– 0.2
0.9– 0.1
3.5– 0.2
2.5
–
0.2
1.0
1.0
2.5
–
0.2
3.0– 0.2
1.0 max.
123
0 to 0.15
0 to 0.15
2.5
0.5 max.