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1998©
Document No. D16138EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD1695
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
The 2SD1695 is a Darlington connection transistor and
incorporates a dumper diode between the collector and emitter and
a constant voltage diode and protection elements between the
collector and base. This transistor is ideal for drives in solenoid and
actuators.
FEATURES
• On-chip protection elements enable time and cost reduction.
C to E: Dumper diode
C to B: Constant diode
Low collector saturation voltage
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 31 ±4 V
Collector to emitter voltage VCEO 31 ±4 V
Emitter to base voltage VEBO 8.0 V
Collector current (DC) IC(DC) ±2.0 A
Collector current (pulse) IC(pulse)* ±3.0 A
Base current (DC) IB(DC) 0.2 A
Total power dissipation PT (Ta = 25°C) 1.3 W
Total power dissipation PT (Tc = 25°C) 10 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Emitter
2. Collector
3. Base
4. Collector (fin)