2SD1616A

NPN
SILICON
TRANSISTOR
DESCRIPTION
2SD1616A is NPN silicon planar
transistor designed for use in driver and
output stages of AF amplifier, general
purpose application.


ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage VCEO 60V
Collector-Base Voltage VCBO 120V
Emitter-Base Voltage VEBO 6V
Collector Current Continuous IC 1A
Total Power Dissipation @ Ta=25
o
CPtot 0.65W
Operating & Storage Junction Temperature Tj,Tstg -55 to +150
o
C
ELECTRICAL CHARACTERISTICS (Ta=25
o
C)
PARAMETER SYMBOL MIN MAX UNIT CONDITIONS
Collector Cutoff Current ICBO 100 nA VCB=60V IE=0
Emitter Cutoff Current IEBO 100 nA VEB=6V IC=0
D.C. Current Gain HFE * 170 350 VCE=2V IC=100mA
D.C. Current Gain HFE * 45 VCE=2V IC=1A
Base-Emitter Voltage VBE * 600 700 mV VCE=2V IC=50mA
Collector-Emitter Saturation Voltage VCE(sat) * 0.5 V IC=1A IB=50mA
Base-Emitter Saturation Voltage VBE(sat) * 1.2 V IC=1A IB=50mA
Output Capacitance Cob 19 TYP. pF VCB=10V IE=0
Gain Bandwidth Product fT 100 MHz VCE=2V IC=100mA
Turn-On Time ton 0.07 TYP. µs Vcc=10V IC=100mA
Storage Time tstg 0.95 TYP. µs IB1=-IB2=10mA
Fall Time tf 0.07 TYP. µs VBE(off)=-2 to 3V
* Pulse test PW ≦ 350µs, duty cycle ≦ 2%.

MICRO
ELECTRONI
C
S
12.7
(0.5)
min.
4.6
(0.18)
10
2.54
(0.1)0.51
(0.02)
Bottom view
0.45
(0.018)
Unit: mm(inch)
TO-92B
0.4
(0.016)
4.68
(0.18)
3.58
(0.14)
EBC
G/F, 38 Hung To Road, Kwun Tong, Kowloon, Hong Kong.
Kwun Tong P.O. BOX 69477, Hong Kong. TEL: (852) 23430181 FAX: (852) 23410321
HOMEPAGE: http://www.microelectr.com.hk E-MAIL ADDRESS: common@microelectr.com.hk
MICRO ELECTRONICS LTD.